FFSH20120ADN-F085
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-3L
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Manufacturer:onsemi
Product Category:
Diodes, Silicon Carbide Schottky Diodes
Avnet Manufacturer Part #: FFSH20120ADN-F085
-
RoHS 10 Compliant -
Tariff Charges
- Max Junction Temperature 175°C
- Avalanche Rated 100 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 20 A | ||
| TO-247 | ||
| null | ||
| Through Hole | ||
| 3 Pins | ||
| 175 °C | ||
| null | ||
| null | ||
| 1.2 kV | ||
| 62 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
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