FFSH20120ADN-F085
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-3L
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Manufacturer:onsemi
Product Category:
Discretes, Diodes & Rectifiers, Silicon Carbide Schottky Diodes
Avnet Manufacturer Part #: FFSH20120ADN-F085
Secondary Manufacturer Part#: FFSH20120ADN-F085
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RoHS 10 Compliant -
Tariff Charges
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
- Max Junction Temperature 175°C
- Avalanche Rated 100 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 30 A | ||
| TO-247 | ||
| Dual Common Cathod | ||
| Through Hole | ||
| 175 °C | ||
| AEC-Q101 | ||
| 1.2 kV | ||
| 62 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
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