FFSB10120A-F085
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, D2PAK Automotive Silicon Carbide (SiC) Schottky Diode, 1200V
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Manufacturer:onsemi
Product Category:
Discretes, Diodes & Rectifiers, Silicon Carbide Schottky Diodes
Avnet Manufacturer Part #: FFSB10120A-F085
Secondary Manufacturer Part#: FFSB10120A-F085
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RoHS 10 Compliant -
Tariff Charges
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC-Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 21 | ||
| TO-263 (D2PAK) | ||
| Single | ||
| Surface Mount | ||
| 3 | ||
| 175 °C | ||
| AEC-Q101 | ||
| 1.2 | ||
| 62 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
Factory Lead Time: