FDV301N
Power MOSFET, N Channel, 25 V, 220 mA, 4 ohm, SOT-23, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)1.06V)
- Gate-source zener for ESD ruggedness (6kV human body model)
- Replace multiple NPN digital transistors with one DMOS FET
- 8V gate source voltage (VGSS)
- 357°C/W thermal resistance, junction to ambient
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 220 mA | ||
| 4 Ohm | ||
| 25 V | ||
| 1.06 V | ||
| 3 | ||
| 150 °C | ||
| 350 mW | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |