FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mO
-
RoHS 10 Compliant -
Tariff Charges
The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. It is well suited for low voltage and low current applications. UniFET™ MOSFET is high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Switching loss improvements
- Lower conduction loss
- 100% avalanche tested
- Smaller stored energy in dynamic characteristics
- A lower gate charge (Qg) performance
- Improved system reliability in PFC and soft switching topologies
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 6.3 | ||
| 45 | ||
| 30 | ||
| 1 | ||
| 4 | ||
| 150 °C | ||
| 3 | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: