FDS89161
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDS89161
Secondary Manufacturer Part#: FDS89161
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RoHS 10 Compliant -
Tariff Charges
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench process that has been optimized for rDS(on), switching performance and ruggedness.
- Shielded Gate MOSFET Technology
- Max rDS(on) = 105 mOat VGS= 10 V, ID = 2.7 A
- Max rDS(on) = 171 mO at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 2.7 A | ||
| 105 mOhm | ||
| 100 V | ||
| 8 | ||
| 150 °C | ||
| 31 W | ||
| SOIC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: