FDS8882
N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mO
Click image to enlarge
Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDS8882
Secondary Manufacturer Part#: FDS8882
-
RoHS 10 Compliant -
Tariff Charges
The FDS8882 is a 30V N-Channel PowerTrench MOSFET The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
- Max rDS(on) = 20.0 mO at VGS = 10 V, ID = 9 A
- Max rDS(on) = 22.5 mO at VGS = 4.5 V, ID = 8 A
- High performance trench technology for extremely low rDS(on) and fast switching
- High power and current handling capability
- Termination is Lead-free and RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 9 | ||
| 20 mOhm | ||
| 30 | ||
| 3 | ||
| 8 | ||
| 150 °C | ||
| 2.5 | ||
| SOIC | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290055 |
| Schedule B: | 8541290080 |
Factory Lead Time: