FDS6898AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDS6898AZ
Secondary Manufacturer Part#: FDS6898AZ
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RoHS 10 Compliant -
Tariff Charges
The FDS6898AZ is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±12V Gate to source voltage
- 9.4A Continuous drain current
- 38A Pulsed drain current
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 9.4 | ||
| 14 | ||
| 20 | ||
| 8 | ||
| 150 °C | ||
| 2 | ||
| SOIC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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