FDS6892A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mO
Click image to enlarge
Manufacturer:onsemi
Product Category:
Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: FDS6892A
Secondary Manufacturer Part#: FDS6892A
-
RoHS 10 Compliant -
Tariff Charges
The FDS6892A is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±12V Gate to source voltage
- 7.5A Continuous drain current
- 30A Pulsed drain current
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 7.5 | ||
| 18 | ||
| 20 | ||
| 8 | ||
| 150 °C | ||
| 2 | ||
| SOIC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: