FDN86246
N-Channel PowerTrench® MOSFET 150V 1.6A, 261mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDN86246
Secondary Manufacturer Part#: FDN86246
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RoHS 10 Compliant -
Tariff Charges
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench process that has been optimized for rDS(on), switching performance and ruggedness.
- Max rDS(on) = 261 mO at VGS = 10 V, ID = 1.6 A
- Max rDS(on) = 359 mO at VGS = 6 V, ID = 1.4 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL tested
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 1.6 | ||
| 261 mOhm | ||
| 150 | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 1.5 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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