FDMS86202ET120
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDMS86202ET120
Secondary Manufacturer Part#: FDMS86202ET120
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RoHS 10 Compliant -
Tariff Charges
FDMS86202ET120 is a N-channel shielded gate PowerTrench® MOSFET. This N-channel MOSFET is produced using Fairchild Semiconductor’s Advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application includes DC-DC conversion.
- Shielded gate MOSFET Technology
- Advanced package and silicon combination for low rDS(on) and high efficiency
- 100% UIL tested
- 120V drain to source voltage (TA = 25°C), 102A continuous drain current (TC = 25°C)
- 3.1V maximum gate source threshold voltage (VGS=VDS, ID=250µA), 187W power dissipation (TC=25°C)
- 3275pF typical input capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 460pF typical output capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 8.75ns typical rise time (VDD = 60V, ID = 13.5A, VGS = 10V, RGEN = 6ohm)
- 14.3nC gate to source charge typical (ID = 13.5A, VDD = 60V, TJ = 25°C)
- 8 pin power 56 package, operating temperature range from -55 to +175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 102 | ||
| 7.2 mOhm | ||
| 120 | ||
| 4 | ||
| 8 | ||
| 175 °C | ||
| 187 | ||
| Power 56 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: