FDMS3660S
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
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![FDMS3660S]()
Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDMS3660S
Secondary Manufacturer Part#: FDMS3660S
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RoHS 10 Compliant -
Tariff Charges
The FDMS3660S is a dual N-channel Asymmetric MOSFET suitable for use with computing, general purpose point of load and notebook VCORE applications. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout (lower circuit inductance & reduced switch node ringing)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 60|145 | ||
| 8 | ||
| 30 | ||
| 8 | ||
| 150 °C | ||
| 2.5 | ||
| PQFN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: