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FDMF6707B

Extra-Small, High-Performance, High-Frequency DrMOS Module

Manufacturer:onsemi
Avnet Manufacturer Part #: FDMF6707B
Secondary Manufacturer Part#: FDMF6707B
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The XS DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6707B integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-compact 6x6mm PQFN package. With an integrated approach, the complete switching power stage is optimized for driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON). XS DrMOS uses Fairchild's high-performance PowerTrench MOSFET technology, which dramatically reduces switch ringing, eliminating the snubber circuit in most buck converter applications. A new driver IC with reduced dead times and propagation delays further enhances performance. A thermal warning function warns of potential over-temperature situations. FDMF6707B also incorporates features such as Skip Mode (SMOD) for improved light-load efficiency, along with a 3-state 3.3V PWM input for compatibility with a wide range of PWM controllers.

  • Ultra-Compact 6x6mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions
  • Fully Optimized System Efficiency
  • Clean Switching Waveforms with Minimal Ringing
  • High-Current Handling
  • Over 93% Peak-Efficiency
  • High-Current Handling of 50A
  • High-Performance PQFN Copper-Clip Package
  • 3-State 3.3V PWM Input Driver
  • Skip-Mode SMOD# (Low-Side Gate Turn Off) Input
  • Thermal Warning Flag for Over-Temperature Condition
  • Driver Output Disable Function (DISB# Pin)
  • Internal Pull-Up and Pull-Down for SMOD# and DISB# Inputs, Respectively
  • Fairchild Power Trench@ Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing
  • Fairchild SyncFET™ (Integrated Schottky Diode) Technology in the Low-Side MOSFET
  • Integrated Bootstrap Schottky Diode
  • Adaptive Gate Drive Timing for Shoot-through Protection
  • Under-Voltage Lockout (UVLO)
  • Optimized for Switching Frequenci

Technical Attributes

Find Similar Parts

Description Value
PQFN EP
Surface Mount
40
-40 to 125 °C
6 x 6 x 1.05 mm

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542330001
Schedule B: 8542390000
In Stock :  0
Additional inventory
Factory Lead Time: 2 Weeks
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$5.25974
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$5.0