FDME1034CZT

This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

• Q1: N-Channel
  • Max rDS(on) = 66 mO at VGS = 4.5 V, ID = 3.4 A
  • Max rDS(on) = 86 mO at VGS = 2.5 V, ID = 2.9 A
  • Max rDS(on) = 113 mO at VGS = 1.8 V, ID = 2.5 A
  • Max rDS(on) = 160 mO at VGS = 1.5 V, ID = 2.1 A
• Q2: P-Channel
• --Max rDS(on) = 142 mO at VGS = -4.5 V, ID = -2.3 A
  • Max rDS(on) = 213 mO at VGS = -2.5 V, ID = -1.8 A
  • Max rDS(on) = 331 mO at VGS = -1.8 V, ID = -1.5 A
  • Max rDS(on) = 530 mO at VGS = -1.5 V, ID = -1.2 A
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
• Free from halogenated compounds and antimony oxides
• HBM ESD protection level > 1600 V (Note 3)
• RoHS Compliant