FDMC012N03
N-Channel Power Trench® MOSFET 30 V, 1.23 mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDMC012N03
Secondary Manufacturer Part#: FDMC012N03
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RoHS 10 Compliant -
Tariff Charges
FDMC012N03 is a 30V, 1.23mohm, N-channel Power Trench® MOSFET. This is produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Typical applications include DC-DC conversion.
- Max rDS(on) = 1.23mohm at VGS = 10V, ID = 35A
- Max rDS(on) = 1.46mohm at VGS = 4.5V, ID = 32A
- High performance technology for extremely low rDS(on)
- 2V max gate source threshold voltage
- 185A continuous drain current Id
- 64W power dissipation
- 8 pin Power 33 package
- Operating and storage junction temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 185 | ||
| 1.23 | ||
| 30 | ||
| 2 | ||
| 8 | ||
| 150 °C | ||
| 64 | ||
| Power 33 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290055 |
| Schedule B: | 8541290080 |
Factory Lead Time: