FDI045N10A-F102
Power MOSFET, N Channel, 100 V, 164 A, 0.0038 ohm, I2PAK, Through Hole
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDI045N10A-F102
Secondary Manufacturer Part#: FDI045N10A-F102
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RoHS 10 Compliant -
Tariff Charges
This N-Channel MOSFET is produced using advance Power Trench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
- R DS(on) = 3.8 m O ( Typ.) @ V GS = 10 V, I D = 100 A
- Fast Switching Speed
- Low Gate Charge, Q G = 54 nC (Typ.)
- High Performance Trench Technology for Extremely Low R DS(on)
- High Power and Current Handling Capability
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 164 | ||
| 4.5 mOhm | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 263 | ||
| I2PAK | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: