FDG1024NZ
Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: FDG1024NZ
Secondary Manufacturer Part#: FDG1024NZ
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RoHS 10 Compliant -
Tariff Charges
The FDG1024NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very low level gate drive requirements allowing operation in 1.5V circuits (VGS (th) 1V)
- Very small package outline
- ±8V Gate to source voltage
- 1.2A Continuous drain current
- 6A Pulsed drain current
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 1.2 | ||
| 175 | ||
| 20 | ||
| 6 | ||
| 150 °C | ||
| 360 | ||
| SOT-363 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: