FDC6401N
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDC6401N
Secondary Manufacturer Part#: 82C2449
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RoHS 10 Compliant -
Tariff Charges
The FDC6401N is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed. The device is suitable for use with DC-to-DC converters and battery protected applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±12V Gate to source voltage
- 3A Continuous drain/output current
- 12A Pulsed drain/output current
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 3 A | ||
| 70 mOhm | ||
| 20 V | ||
| 6 | ||
| 150 °C | ||
| 960 mW | ||
| TSOT-23 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: