FDC5612
Power MOSFET, N Channel, 60 V, 4.3 A, 0.055 ohm, SuperSOT, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The FDC5612 is a N-channel MOSFET produced using PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- High performance Trench technology for extremely low RDS (ON)
- 12.5nC typical low gate charge
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 4.3 A | ||
| 55 mOhm | ||
| 60 V | ||
| 4 V | ||
| 6 | ||
| 150 °C | ||
| 1.6 W | ||
| SuperSOT | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |