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FDB86135

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 176A, 3.5mO

Manufacturer:onsemi
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FDB86135
Secondary Manufacturer Part#: FDB86135
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The FDB86135 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance. It is suitable for use in DC-to-DC primary bridge, DC-to-DC synchronous rectification and hot swap application.

  • Fast-switching speed
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability

Technical Attributes

Find Similar Parts

Description Value
N Channel
176
3.5
100
4
3
175 °C
227
TO-263 (D2PAK)
Surface Mount

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290040
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 133 Weeks
Price for: Each
Quantity:
Min:800  Mult:800  
USD $:
800+
$3.42857
1600+
$3.24324
3200+
$3.1579
6400+
$3.07692
12800+
$3.0