FCD4N60TM
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 O, DPAK
- RoHS 10 Compliant
- Tariff Charges
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 12.8nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 3.9 | ||
| 1.2 | ||
| 600 | ||
| 5 | ||
| 3 | ||
| 150 °C | ||
| 50 | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |