FAN7888MX
225V, 3.3/5V input logic compatible, 0.65/0.35A sink/source current, 3-Phase Half-Bridge Gate-Drive IC
- RoHS 10 Compliant
- Tariff Charges
FAN7888MX is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +200V. Onsemi’s high-voltage process and common-mode noise cancelling technique provide stable operation of high-side drivers under high-dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS = -9.8V (typical) for VBS = 15V. The UVLO circuits prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 350 mA / 650 mA, respectively, which is suitable for three-phase half-bridge applications in motor drive systems. Applications include battery based motor applications (E-bike, power tool), 3-phase motor inverter driver.
- Floating channel for bootstrap operation to +200V
- Typically 350mA / 650mA sourcing/sinking current driving capability for all channels
- 3 half-bridge gate driver
- Extended allowable negative VS swing to -9.8 V for signal propagation at VBS = 15V
- Matched propagation delay time maximum of 50ns
- 3.3V and 5V input logic compatible
- Built-in shoot-through prevention circuit for all channels with 270ns typical dead time
- Built-in common mode dv/dt noise cancelling circuit, built-in UVLO functions for all channels
- 130ns turn-on propagation delay, 150ns turn-off propagation delay (VS1,2,3 = 0V)
- SOIC-20 package, -40°C to +125°C temperature range
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| 3 Phase Half Bridge | ||
| High and Low Side | ||
| 130 ns | ||
| 3.3V|5V | ||
| Non-Inverting | ||
| Matte Tin | ||
| 260 | ||
| 80 ns | ||
| 440 ns | ||
| 120 ns | ||
| 240 ns | ||
| 220 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 6 | ||
| 20 | ||
| 3 | ||
| 6 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| 20SOIC W | ||
| 0.65 A | ||
| 20 | ||
| 13 x 7.6 x 2.35 mm | ||
| No | ||
| 200 V | ||
| 650 mA | ||
| 350 mA | ||
| SOIC W | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |