FAN7389MX1
625V, 3.3/5V input logic compatible, 0.65/0.35A sink/source current, 3-Phase Half-Bridge Gate-Drive IC with OCP/Shutdown protection
- RoHS 10 Compliant
- Tariff Charges
The FAN7389 is a monolithic three-phase half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +600V. Fairchild’s high-voltage process and common-mode noise canceling technique provide stable operation of high-side drivers under high-dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS = -9.8V (typical) for VBS = 15V. The protection functions include under-voltage lockout and inverter over-current trip with an automatic fault-clear function. Over-current protection that terminates all six outputs can be derived from an external current-sense resistor. An open-drain fault signal is provided to indicate that an over-current or under-voltage shutdown has occurred. The UVLO circuits prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source and sink 350mA and 650mA, respectively; which is suitable for three-phase half-bridge applications in motor drive systems.
- Floating Channels for Bootstrap Operation to +600V
- Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for al Channels
- Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V
- Output In-Phase with Input Signal
- Over-Current Shutdown Turns off All Six Drivers
- Matched Propagation Delay for All Channels
- 3.3V and 5.0V Input Logic Compatible
- Adjustable Fault-Clear Timing
- Built-in Advanced Input Filter
- Built-in Shoot-Through Prevention Logic
- Built-in Soft Turn-Off Function
- Common-Mode dv/dt Noise Canceling Circuit
- Built-in UVLO Functions for All Channels
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| 3 Phase Half Bridge | ||
| High and Low Side | ||
| 500 ns | ||
| 3.3V|5V | ||
| Matte Tin | ||
| 260 | ||
| 80 ns | ||
| 650 ns | ||
| 100 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 6 | ||
| 28 | ||
| 6 | ||
| 6 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 500 ns | ||
| 28SOIC W | ||
| 0.65 A | ||
| 28 | ||
| IGBT, MOSFET, Mosfet | ||
| 17.9 x 7.5 x 2.35 mm | ||
| No | ||
| 600 V | ||
| 650 mA | ||
| 350 mA | ||
| SOIC W | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |