FAN3226TMX
TTL input, dual inverting output, peak 3A sink, 3A source current Low-Side Gate Driver
- RoHS 10 Compliant
- Tariff Charges
The FAN3226 is a Dual 2-A High-Speed, Low-Side Gate Drivers The FAN3226 family of dual 2 A gate drivers is designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with either TTL or CMOS input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output low until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET The FAN322X drivers incorporate MillerDrive architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability The FAN3226 offers two inverting driver, Each device has dual independent enable pins that default to ON if not connected
- Industry-Standard Pinouts
- 4.5-V to 18-V Operating Range
- 3-A Peak Sink/Source at VDD = 12 V
- 2.4 A-Sink / 1.6-A Source at VOUT = 6 V
- Choice of TTL or CMOS Input Thresholds
- Dual Inverting + Enable (FAN3226
- Internal Resistors Turn
- Driver Off If No Inputs
- MillerDrive™ Technology
- 12-ns / 9-ns Typical Rise/Fall Times (1-nF Load)
- Under 20-ns Typical Propagation Delay Matched
- within 1 ns to the Other Channel
- Double Current Capability by Paralleling Channels
- 8-Lead 3x3 mm MLP or 8-Lead SOIC Package
- Rated from –40°C to +125°C Ambient
- Automotive Qualified to AEC-Q100 (F085 Version)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Full Bridge | ||
| Inverting | ||
| Low Side | ||
| 19 ns | ||
| TTL | ||
| Matte Tin | ||
| 260 | ||
| 17 ns | ||
| 34 ns | ||
| 22 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 18 ns | ||
| 8SOIC N | ||
| 3 A | ||
| 8 | ||
| MOSFET | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 2.4 A | ||
| -1.6 A | ||
| SOIC N | ||
| 18 V | ||
| 4.5 V | ||
| 12 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |