DTC114EET1G
NPN Bipolar Digital Transistor (BRT). ONSSPCTRNSTME1D1N;
- RoHS 10 Compliant
- Tariff Charges
The DTC114EET1G is a NPN Digital Transistor with monolithic bias resistor network designed to replace a single device and its external resistor bias network. The bias resistor transistor contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Technical Attributes
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| Description | Value | |
|---|---|---|
| 10 | ||
| 10 kOhm | ||
| 50 | ||
| 100 | ||
| 35 | ||
| 3 | ||
| 150 °C | ||
| 300 | ||
| SC-75 | ||
| Surface Mount | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |