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CNY17F4VM

6-Pin DIP High BVCEO Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;

Manufacturer:onsemi
Avnet Manufacturer Part #: CNY17F4VM
Secondary Manufacturer Part#: CNY17F4VM
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The CNY17F4M devices consist Of a gallium arsenide infrared emitting diode coupled With an NPN phototransistor in a dual in-line package.

  • High BVceo: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
  • Current Transfer Ratio In Select Groups
  • Very LOW Coupled Capacitance Along With NO Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
  • Safety and Regulatory Approvals:
    • UL1577, 4,170 VACRMS for 1 Minute
    • DIN-EN/1EC60747-5-5, 850 V Peak working Insulation Voltage

Technical Attributes

Find Similar Parts

Description Value
60 mA
Matte Tin
260
50 mA
70 V
320@10mA %
5250 Vrms
Through Hole
1
-40 to 100 °C
DC
6PDIP White
6
8.89 x 6.6 x 3.53 mm
PDIP

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541498000
Schedule B: 8541498000
In Stock :  0
Additional inventory
Factory Lead Time: 2 Weeks
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Quantity:
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4600+
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$0.17741
23000+
$0.1765
46000+
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