CNY17F4VM
6-Pin DIP High BVCEO Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
- RoHS 10 Compliant
- Tariff Charges
The CNY17F4M devices consist Of a gallium arsenide infrared emitting diode coupled With an NPN phototransistor in a dual in-line package.
- High BVceo: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Very LOW Coupled Capacitance Along With NO Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/1EC60747-5-5, 850 V Peak working Insulation Voltage
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 mA | ||
| Matte Tin | ||
| 260 | ||
| 50 mA | ||
| 70 V | ||
| 320@10mA % | ||
| 5250 Vrms | ||
| Through Hole | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6PDIP White | ||
| 6 | ||
| 8.89 x 6.6 x 3.53 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |