CNY17F4SR2VM
6-Pin DIP High BVCEO Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
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Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: CNY17F4SR2VM
Secondary Manufacturer Part#: CNY17F4SR2VM
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RoHS 10 Compliant -
Tariff Charges
The CNY17F4M devices consist Of a gallium arsenide infrared emitting diode coupled With an NPN phototransistor in a dual in-line package.
- High BVceo: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Very LOW Coupled Capacitance Along With NO Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/1EC60747-5-5, 850 V Peak working Insulation Voltage
Technical Attributes
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ECCN / UNSPSC / COO
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| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |
Factory Lead Time: