BUL45D2G
NPN Darlington Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
Click image to enlarge
![BUL45D2G]()
Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: BUL45D2G
Secondary Manufacturer Part#: BUL45D2G
-
RoHS 10 Compliant -
Tariff Charges
The BUL45D2G is a NPN state-of-art high speed high gain Bipolar Power Transistor (H2BIP) with high dynamic characteristics and lot-to-lot minimum spread 150ns on storage time makes it ideally suitable for light ballast applications. It offers extremely low storage time minimum/maximum guarantees due to the H2BIP structure which minimizes the spread.
- Low base drive requirement
- Integrated collector-emitter free wheeling diode
- Fully characterized and guaranteed dynamic VCE(sat)
- 6 Sigma process providing tight and reproducible parameter spreads
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 400 V | ||
| 5 A | ||
| 22 | ||
| 3 | ||
| 150 °C | ||
| 75 W | ||
| TO-220 | ||
| Through Hole | ||
| NPN | ||
| 13 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: