BSS123
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Drain to source voltage (Vds) of 100V
- Gate to source voltage of ±20V
- Low on state resistance of 1.2ohm at Vgs 10V
- Continuous drain current of 170mA
- Maximum power dissipation of 360mW
- Operating junction temperature range from -55°C to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 170 mA | ||
| 1.2 Ohm | ||
| 100 V | ||
| 2 V | ||
| 3 | ||
| 150 °C | ||
| 360 mW | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |