BSS123
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- High density cell design for extremely low RDS (ON)
- Rugged and reliable
- ±20V continuous gate source voltage (VGSS)
- 350°C/W thermal resistance, junction to ambient
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 170 mA | ||
| 1.2 Ohm | ||
| 100 V | ||
| 2 V | ||
| 3 | ||
| 150 °C | ||
| 360 mW | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |