4N38M
6-pin DIP High Voltage Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
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![4N38M]()
Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: 4N38M
Secondary Manufacturer Part#: 4N38M
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RoHS 10 Compliant -
Tariff Charges
The 4N38 is phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
- High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
- High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
- Underwriters Laboratory (UL) recognized File# E90700
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 80 mA | ||
| Matte Tin | ||
| 260 | ||
| 100 mA | ||
| 80 V | ||
| 5300 Vrms | ||
| Through Hole | ||
| 1 | ||
| -55 to 100 °C | ||
| DC | ||
| 6PDIP Black | ||
| 6 | ||
| 8.89 x 6.86 x 2.92 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |
Factory Lead Time: