2N7002T
N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2O
- RoHS 10 Compliant
- Tariff Charges
The 2N7002T is an ultra-compact, high-speed N-channel MOSFET optimized for low-power switching applications in space-constrained designs. Encased in a miniature SOT-523 package, this device delivers robust performance with low gate threshold voltage, fast switching times, and low R DS(on), making it ideal for use in portable electronics, wearables, and compact embedded systems. Engineered for direct logic-level interfacing, the 2N7002T enables efficient control of loads such as LEDs, sensors, and small actuators using microcontrollers and logic ICs.
- Logic-Level Gate Drive (VGS(th) ~1–2.5V): Easily driven by 2.5V, 3.3V, or 5V logic signals; no level shifting needed
- Low On-Resistance R DS(on): Minimizes conduction losses for improved energy efficiency
- Fast Switching Speed: Suitable for high-speed digital circuits and PWM control
- Miniature SOT-523 Package: Ideal for space-constrained designs like wearables, mobile, and IoT devices
- Low Gate Charge (Q g): Reduces power required from control logic; efficient with MCUs or ASICs
- Wide Operating Temperature Range (-55°C to +150°C): Ensures stability and performance across harsh environmental conditions
- MSL 1 Rating: Unlimited floor life; no moisture precautions required before reflow soldering
- Meets global environmental and safety standards: RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 115 | ||
| 2 | ||
| 60 | ||
| 2 | ||
| 3 | ||
| 150 °C | ||
| 200 | ||
| SOT-523F | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |