2N7002K
Power MOSFET, N Channel, 60 V, 340 mA, 5 ohm, SOT-23, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
These N-channel enhancement mode field-effect transistors are manufactured with high cell density DMOS technology. They are designed to minimize on-state resistance while delivering rugged, reliable, and fast switching performance. These transistors are especially well-suited for low-voltage, low-current applications, including small servo motor control, power MOSFET gate drivers, and other switching applications.
- Low input/output leakage
- ±20V Gate-source voltage
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 300 mA | ||
| 2 Ohm | ||
| 60 V | ||
| 2.5 V | ||
| 3 | ||
| 150 °C | ||
| 350 mW | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |