2N7000
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: 2N7000
Secondary Manufacturer Part#: 2N7000
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RoHS 10 Compliant -
Tariff Charges
The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 200 mA | ||
| 5 Ohm | ||
| 60 V | ||
| 3 V | ||
| 3 | ||
| 150 °C | ||
| 400 mW | ||
| 2N7000 Series | ||
| TO-92 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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