2N7000-D26Z
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: 2N7000-D26Z
Secondary Manufacturer Part#: 2N7000-D26Z
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RoHS 10 Compliant -
Tariff Charges
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Thermal resistance, junction to ambient
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 200 mA | ||
| 5 Ohm | ||
| 60 V | ||
| 3 V | ||
| 3 | ||
| 150 °C | ||
| 400 mW | ||
| 2N7000 Series | ||
| TO-92 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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