2N5551BU
Small Signal NPN Bipolar Transistor. ONSSPCTRNSTVU6M5P;
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![2N5551BU]()
Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: 2N5551BU
Secondary Manufacturer Part#: 83C3397
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RoHS 10 Compliant -
Tariff Charges
The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
- Collector to emitter breakdown voltage of 160V
- Collector to emitter saturation voltage of 200mV at 50mA collector current
- Power dissipation of 625mW
- DC collector current of 600mA
- DC current gain of 30 at Ic=50mA
- Operating junction temperature range from -55°C to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 160 V | ||
| 600 mA | ||
| 80 | ||
| 3 | ||
| 150 °C | ||
| 625 W | ||
| TO-92 | ||
| Through Hole | ||
| NPN | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: