1N5822G
Schottky Barrier Rectifier, 3.0 A, 40 V
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Manufacturer:onsemi
Product Category:
Discretes, Diodes & Rectifiers, Schottky Rectifiers
Avnet Manufacturer Part #: 1N5822G
Secondary Manufacturer Part#: 1N5822G
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RoHS 10 Compliant -
Tariff Charges
The 1N5822G is a 2-pin 40V general purpose Schottky Barrier Rectifier features an epitaxial construction with oxide passivation and metal overlap contact. The Schottky rectifier employs the Schottky barrier principle in a large area metal-to-silicon power diode. It has state-of-the-art geometry. It is ideally suited for use as rectifier in low-voltage, high-frequency inverters, freewheeling diodes and polarity protection diodes.
- Extremely low vF
- Low power loss/high efficiency
- Low stored charge, majority carrier conduction
- Cathode indicated by polarity band
Technical Attributes
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
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