1N5819G
1.0 A, 40 V, Schottky Barrier Rectifier
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Manufacturer:onsemi
Product Category:
Discretes, Diodes & Rectifiers, Schottky Rectifiers
Avnet Manufacturer Part #: 1N5819G
Secondary Manufacturer Part#: 1N5819G
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RoHS 10 Compliant -
Tariff Charges
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.
- Extremely Low vF
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- These are Pb-Free Devices
Technical Attributes
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| Description | Value | |
|---|---|---|
| 1 | ||
| Axial Leaded | ||
| Single | ||
| Through Hole | ||
| 25 | ||
| 600 | ||
| 2 | ||
| 125 °C | ||
| 40 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
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