1N5817G
1.0 A, 20 V, Schottky Rectifier
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Manufacturer:onsemi
Product Category:
Discretes, Diodes & Rectifiers, Schottky Rectifiers
Avnet Manufacturer Part #: 1N5817G
Secondary Manufacturer Part#: 1N5817G
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RoHS 10 Compliant -
Tariff Charges
The 1N5817G is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.
- Cathode indicated by polarity band
- Extremely low VF
- Low stored charge, majority carrier conduction
- Low-power loss/high-efficiency
- All external surfaces corrosion-resistant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1 | ||
| Axial Leaded | ||
| Single | ||
| Through Hole | ||
| 25 | ||
| 450 | ||
| 2 | ||
| 125 °C | ||
| 20 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
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