MRFE6VS25LR5
Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin NI-360H T/R
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Manufacturer:NXP
Product Category:
Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: MRFE6VS25LR5
Secondary Manufacturer Part#: MRFE6VS25LR5
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RoHS 10 Compliant -
Tariff Charges
MRFE6VS25LR5 is a high ruggedness N-channel enhancement mode lateral MOSFET. RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. This device is fabricated u
- RF power LDMOS transistor
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protec
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 133 | ||
| 2 | ||
| 2 | ||
| 1.8 | ||
| 225 °C | ||
| NI-360H | ||
| Flange Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290080 |
Factory Lead Time: