MRFE6VP6300HSR5

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.