MRF6VP121KHR5
Transistor RF FET N-CH 110V 965MHz to 1215MHz 4-Pin NI-1230 T/R
- RoHS 10 Compliant
- Tariff Charges
N--Channel Enhancement--Mode Lateral MOSFETs are RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push--Pull Operation
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 110 | ||
| 4 | ||
| 1.215 | ||
| 965 | ||
| 225 °C | ||
| NI-1230 | ||
| Flange Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |