MMZ09332BT1
High Efficiency/Linearity Amplifier, 130 MHz to 1 GHz, 30.5 dB Gain, 3 V to 5 V, HVQFN-12, 175 °C
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Manufacturer:NXP
Product Category:
RF & Wireless, RF & Wireless ICs, RF Amplifier ICs
Avnet Manufacturer Part #: MMZ09332BT1
Secondary Manufacturer Part#: MMZ09332BT1
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RoHS 10 Compliant -
Tariff Charges
MMZ09332BT1 is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23dBm covering frequencies from 130 to 1000MHz. It operates from a supply voltage of 3 to 5V. The amplifier requires minimal external matching and offers state of the art reliability, ruggedness, temperature stability and ESD performance.
- Frequency range from 130 to 1000MHz
- P1dB is 33dBm, 450 to 1000MHz and OIP3 is up to 48dBm at 900MHz
- Excellent linearity
- Active bias control (adjustable externally)
- Single 3 to 5V supply
- Single ended power detector
- 1200mA total supply current
- 29dBm RF input power
- 12 lead HVQFN package
- 175°C junction temperature
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 5, 3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: