MMRF5014HR5
RF FET Transistor, 125 V, 232 W, 1 MHz, 2.7 GHz, NI-360H-2SB
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![MMRF5014HR5]()
Manufacturer:NXP
Product Category:
Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: MMRF5014HR5
Secondary Manufacturer Part#: MMRF5014HR5
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RoHS 10 Compliant -
Tariff Charges
The MMRF5014H 125 W CW RF power GaN transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications. This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 125 | ||
| 3 | ||
| 2.7 | ||
| 1 | ||
| 225 °C | ||
| 232 | ||
| NI-360H-2SB | ||
| Flange Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: