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MMRF1004GNR1

Transistor RF FET N-CH 68V 1600MHz to 2200MHz 2-Pin TO-270G T/R

Official logo for NXP
Manufacturer:NXP
Product Category: Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: MMRF1004GNR1
Secondary Manufacturer Part#: MMRF1004GNR1
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

  • Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP
    Power Gain: 15.5 dB
    Drain Efficiency: 36%
    IMD: –34 dBc
  • Typical 2-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
    Power Gain: 15.5 dB
    Drain Efficiency: 15%
    IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth
  • Typical Single-Carrier N-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (1930-1990 MHz),IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 15.5 dB
    Drain Efficiency: 16%
    ACPR @ 885 kHz Offset = –60 d

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		N Channel
    		68
    		2
    		2.2
    		1.6
    		225 °C
    		TO-270G
    		Flange Mount

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: NO RECOVERY FEE
    ECCN: EAR99
    HTSN: 8542330001
    Schedule B: 8542330000
    In Stock :  0
    Additional inventory
    Factory Lead Time: 777 Weeks
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