KIT33887EKEVBE

The KIT33887EKEVBE evaluation kit features the MC33887 monolithic power IC comprising control logic, charge pump, gate drive, and low RDS(on) MOSFET output H-Bridge circuitry contained in a small surface mount package

• Fully specified operation 5.0 V to 28 V
• Limited operation with reduced performance up to 40 V
• 120 mO RDS(ON) typical H-Bridge MOSFETs
• TTL/CMOS compatible inputs
• PWM frequencies up to 10 kHz
• Active current limiting (regulation)
• Fault status reporting
• Sleep mode with current draw =50 µA (inputs floating or set to match default logic states)