BFU768F,115

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

• Low noise high linearity RF transistor
• 110 GHz f_T silicon germanium technology
• Optimal linearity for low current and high gain
• Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
• Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM bandand 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
  • Low current: 10.8 mA
  • Noise figure < 1.2 dB
  • Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
  • High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
  • Very fast on/off times
  • Unconditionally stable
• Higher IP3, higher gain or lower noise figure possible with different application circuits