BFU710F,115
Trans GP BJT NPN 2.8V 0.01A 4-Pin(3+Tab) DFP T/R
- RoHS 10 Compliant
- Tariff Charges
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
- 110 GHz fT silicon germanium technology
- High maximum power gain 14 dB at 12 GHz
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.45 dB at 12 GHz
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.8 | ||
| 200 | ||
| 4 | ||
| 150 °C | ||
| 136 | ||
| SOT-343F | ||
| Surface Mount | ||
| NPN | ||
| 43 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |