BFU590GX
Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223
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Manufacturer:NXP
Product Category:
Discretes, RF Discretes, RF Bipolar Transistors
Avnet Manufacturer Part #: BFU590GX
Secondary Manufacturer Part#: BFU590GX
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RoHS 10 Compliant -
Tariff Charges
BFU590GX is a NPN wideband silicon RF transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2GHz. Typical applications include automotive applications, broadband amplifiers, medium power amplifiers (500mW at a frequency of 433MHz or 866MHz) and large signal amplifiers for ISM applications.
- 24V collector-base voltage, 12V collector-emitter voltage, 2V emitter-base voltage
- Medium power, high linearity, high breakdown voltage RF transistor
- 95 typical DC gain
- Maximum stable gain is 13dB at 900MHz
- AEC-Q101 qualified
- Output power at 1dB gain compression PL(1dB) is 21.5dBm at 900MHz
- 8.5GHz transition frequency
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 12 V | ||
| 200 mA | ||
| 60 | ||
| 4 | ||
| 150 °C | ||
| 2 W | ||
| AEC-Q101 | ||
| SOT-223 | ||
| Surface Mount | ||
| NPN | ||
| 8.5 GHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: