AFT27S010NT1
Transistor RF FET N-CH 65V 100MHz to 3600MHz 2-Pin PLD-1.5W T/R
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![AFT27S010NT1]()
Manufacturer:NXP
Product Category:
Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: AFT27S010NT1
Secondary Manufacturer Part#: AFT27S010NT1
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RoHS 10 Compliant -
Tariff Charges
The AFT27S010NT1 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Universal Broadband Driven Device with Internal RF Feedback
- RoHS Compliant
- In Tap
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 65 | ||
| 2 | ||
| 3.6 | ||
| 728 | ||
| 150 °C | ||
| PLD-1.5W | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290040 |
Factory Lead Time: