PDP SEO Portlet

AFT09MS015NT1

RF FET Transistor, 40 VDC, 125 W, 136 MHz, 941 MHz, PLD-1.5W

Official logo for NXP
Manufacturer:NXP
Product Category: Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: AFT09MS015NT1
Secondary Manufacturer Part#: AFT09MS015NT1
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment.

  • RF power LDMOS transistor
  • Characterized for operation from 136 to 941MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Integrated stability enhancements
  • Exceptional thermal performance
  • High ruggedness N-channel enhancement mode lateral MOSFET

Technical Attributes

Find Similar Parts

Description Value
N Channel
40
3
941
136
150 °C
125
PLD-1.5W
Surface Mount

ECCN / UNSPSC / COO

Description Value
Country of Origin: PROJECTED FEE
ECCN: EAR99
HTSN: 8541290075
Schedule B: 8541290040
In Stock :  0
Additional inventory
Factory Lead Time: 70 Weeks
Price for: Each
Quantity:
Min:1000  Mult:1000  
USD $:
1000+
$14.4746
2000+
$14.40075
4000+
$14.3269
8000+
$14.25305
16000+
$14.1792