AFT09MS015NT1
RF FET Transistor, 40 VDC, 125 W, 136 MHz, 941 MHz, PLD-1.5W
- RoHS 10 Compliant
- Tariff Charges
Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment.
- RF power LDMOS transistor
- Characterized for operation from 136 to 941MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection
- Integrated stability enhancements
- Exceptional thermal performance
- High ruggedness N-channel enhancement mode lateral MOSFET
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 40 | ||
| 3 | ||
| 941 | ||
| 136 | ||
| 150 °C | ||
| 125 | ||
| PLD-1.5W | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290040 |