PSMN102-200Y,115
Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount
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Manufacturer:Nexperia
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: PSMN102-200Y,115
Secondary Manufacturer Part#: PSMN102-200Y,115
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RoHS 10 Compliant -
Tariff Charges
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- Higher operating power due to low thermal resistance
- Suitable for high frequency applications due to fast switching characteristics
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 21.5 A | ||
| 102 mOhm | ||
| 200 V | ||
| 4 V | ||
| 5 | ||
| 150 °C | ||
| 113 W | ||
| SOT-669 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: